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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION With TO-3P(I) package High VCEO High speed switching APPLICATIONS Switching regulator and high voltage switching applications High speed DC-DC converter applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION 2SC4157 Fig.1 simplified outline (TO-3P(I)) and symbol Absolute maximum ratings(Ta=25ae ) SYMBOL VCBO VCEO VEBO IC ICM IB PT Tj Tstg PARAMETER CHA IN Base current Collector-base voltage Collector-emitter voltage E SEM NG Open emitter OND IC CONDITIONS TOR UC VALUE 600 450 8 10 20 5 UNIT V V V A A A W ae ae Open base Open collector Emitter-base voltage Collector current-DC Collector current-peak Total power dissipation Junction temperature Storage temperature TC=25ae 100 150 -55~150 Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain CONDITIONS IC=10mA ,IB=0 IC=1mA ,IE=0 IC=5A; IB=1A IC=5A; IB=1A VCB=500V; IE=0 VEB=8V; IC=0 IC=5A ; VCE=5V 15 MIN 450 600 TYP. 2SC4157 SYMBOL V(BR)CEO V(BR)CBO VCEsat VBEsat ICBO IEBO hFE MAX UNIT V V 1.0 2.0 100 1.0 |I V V A mA Switching times tr tstg tf Rise time Fall time Storage time CHA IN E SEM NG VCCO 200V IB1=-IB2=0.5A ; RL=40| OND IC TOR UC 0.5 |I 2.5 0.5 s |I |I s s 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC4157 CHA IN E SEM NG OND IC TOR UC Fig.2 Outline dimensions(unindicated tolerance:A 0.10 mm) 3 |
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